Part's
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Cluster System
Wafer & Carrier: 8″ Std.
Application: 4 sided and 1 L/L
Vacuum Capacity: Base Vacuum : <1Torr
Robot Repeatability:
R Axis : 755mm± 0.05mm(3σ)
T(Ɵ) Axis : Infinite Rot. ± 0.003o(3σ)
Z Axis : 25mm or 35mm ± 0.05mm(3σ)
Pumping : Two step (Soft & Fast) Pumping
LED PSS Etching Chamber
LED PSS Etching Chamber Modify
Chemical Anneal In-line Heater
Metal Analysis Manual Heater
Wafer Table Anneal Heater
Process Temp & Control: R.T. ~ 250 ℃
Heating Elements: Tungsten Halogen Lamp
Chemical Inline Heater
Process Temp & Control: R.T. ~ 180 ℃
Chemical: H3PO4, H2SO4
Heating Elements: Tungsten Halogen Lamp
Gas Flow Point Valve
since Dec. 24 ‘ 2012