
Spike™ Tab Heating System
Solar - Inline Tabbing System
- Application: Wire Type PV Tabbing Process
- Process Temp: 0 ~ 250℃
Control Accuracy: Set temp ± 1℃
- Tem Unifomity: Set temp <± 5℃ / Soak <± 3℃
- Temp Read: Pyrometer(8~14µ) & Embbeded T/C
- Temp Control: DSP Temp Controller with SCR Module
- IR Heater: 2~2.5KW Halogen Lamp / 4ea /3Zone
- Plate Heater: Coated AL Plate Heater / 1~2KW / 1~2Zone
- Special: Ramp up >60℃/sec (RT to 250℃ / 4sec)

Core™ IR Heating Inline System
Display - Glass Heating System
- Application: Flexible Display
- Substrate Size: Willow Glass 600mm x 0.1T
- Heating: IR Heating, Convection Air
- Transfer: Belt driven In-line Roller (Xfer Plane: 935mm)
- Control Accuracy: Set temp ± 1℃
- Temp Unifomity: Set temp <± 1℃ (3Point MIMO Control)
- Temp Read: 3Point T/C
- Power Control: 10H/W Zone (3S/W Zone)

GYRO™ Glass Scribing System
Display - Glass Scribing System
- Dimensions: (w)1700mm x (d)1900mm x (h)1640mm + 1300mm x 1285mm x 1800mm
- Work Size: 1200mm x 1400mm x 1T(0.3~1T) Straight Cut / R Cut (>0.2mm)
Stroke: X Axis (1250mm) / Y Axis (1450mm) / Z Axis (100mm) / R Axis (360˚)
- Head Unit: Auto Pressure Regulation Wheel
- Scribing Accuracy: ±0.02mm ↓
- Work Table Flatness: ±0.05mm ↓
- Size Control: CAD File Input
- Speed: Straight 250mm/sec
- PLC Touch Panel Control or PC Base Controller
- Option: Vision Control / Air Blowing Cleaner

Core™ Spin COATER & HP
PLP - Spin Coater System
- Dimensions: (w)2200mm x (d)1000mm x (h)2200mm
- Substrate Size: (w)200mm x (d)250mm
Appliction: Spin Coater & Hot Plate
- Spin Speed: 0 ~ 5,000 RPM ± 5
- Scan Arm: Multy Nozzle (Max 4 Nozzle) / Up, Down / Center to Edge Scan by Step Motor
- Spin Chuck: Substrate chucking >-70kPa
- Hot Plate Temp: RT ~ 200℃ / Set Temp ±1℃ / Unifomity ±2℃
- Micro Bubble Free: Vac. Degassing
- Metering Dispensing: Max 50cc ± 0.05cc

Core™ Micro-Edge Dispenser
PLP- Micro Edge Dispenser
- Dimensions: (w)1750mm x (d)1450mm x (h)2300mm
- Substrate Size: (w)415mm x (d)510mm x (t)1.2mm
Appliction: PLP Edge Coater
- Stage Stroke & Velocity: X Axis (730mm, 300mm/sec) / Y Axis (980mm, 300mm/sec) / Z Axis (50mm, 300mm/sec)
- Head Scanner: X Axis Line Width 10mm (1280Point) / Z Axis WD 56.5mm (Range ±8mm) / Resolution 1㎛
- Head Vision Align: 15.93Ø (h)11.26mm x (v)11.26mm / Pixel 2048 x 2048 / Resolution 5.5㎛/pixel
- Substrate Table: Panel Vac. Chuck / Align <0.1mm (Mechanical)
- Align, Positioning, Line Accuracy: ±5 ㎛

Core™ Wafer Die Pick and Place
PLP - Wafer Die Transfer System
- Application:

Core™ Micro Pattern Dispenser
PLP - Micro Pattern Dispenser
- Dimensions: (w)1370mm x (d)1460mm x (h)1690mm
- Substrate Size: 400mm x 400mm
Appliction: Flexible Display Pattern Printing
- Stage Stroke & Velocity: X Axis (550mm, 300mm/sec) / Y Axis (740mm, 300mm/sec) / Z Axis (100mm, 300mm/sec)
- Θ Axis: Stroke 5˚ / Resolution 0.00038˚
- Vision Top: (h)960㎛ x (v)724.5㎛ / Pixel 1280 x 966 Resolution 0.75㎛/pixel
- Vision Side: (h)1199㎛ x (v)914㎛ / Pixel 648 x 494 Resolution 1.85㎛/pixel
- Vision Align: (h)234mm x (v)3.2mm㎛ / Pixel 1280 x 960 Resolution 1.8㎛/pixel / Accuracy ±5㎛
- Laser 변위계: Range ±1mm / 분해능 0.04㎛ 이하
- Align, Positioning, Line Accuracy: ±5 ㎛

CORE™ HPO System
Heating - HP Curing Oven
- Dimensions: (w)1350mm x (d)1830mm x (h)2400mm 3Slot Heating Chamber
- Substrate Size: 415mm x 510mm Panel
Hot Plate: 580 x 680mm / 3Heating Chamber
Process Temp & Control: 200℃
Temp Control Accuracy: Set Temp ± 1℃
Tem Unifomity: <± 3℃
- Temp Read: K-Type T/C, 2~3 Zone (Inner, Center, Outer)
- Temp Control: MIMO Control & Slot Selectable
- Heating Elements: Micro Sheath, Inner 1.5Kw, Outer 2Kw

Core™ RTA System
RTA - Rapid Thermo Anneal
- Dimensions: (w)1200mm x (d)1800mm x (h)1850mm
- Substrate Size: 2″ / 4″ / 6″ / 8″ / 12″
Application: Compound Semiconductor (LED & LD Mfg)
- Process Temp & Control: 300 ~ 1200℃
- Temp Control Accuracy: Set Temp ± 1℃
- Temp Unifomity: <± 3℃ / <± 2℃
- Temp Read & Control: Pyrometer
- Power Control: H/W 8~24Zone, S/W Zone 3~7Zone
- Substrate Support, Rotation: CVD SIC Susceptor / 30RPM
- Process Pressure: ATM / RP
- Leak Integrity: < 5mTorr/min

SiGe™ Epi System
Epi - Epitaxy System
- Dimensions: (w)1200mm x (d)1800mm x (h)1850mm
- Substrate Size: 8″ / 12″
Application: Si/SiGe Blanket, Selective / Doped Undoped Epi
- Process Temp & Control: 200 ~ 1000℃ / 350 ~ 1100℃
- Temp Control Accuracy: Set Temp ± 1℃
- Temp Unifomity: <± 5℃
- Temp Read & Control: Pyrometer
- Power Control: H/W 8~24Zone, S/W Zone 3~7Zone
- Substrate Support, Rotation: CVD SIC Susceptor / 30RPM
- Process Pressure: ATM / RP
- Leak Integrity: < 5mTorr/min

CORONA™ 1200M System
Analysis - Heating Chamber
- Application: Metal Analysis Process 8″ / 12″
- Process Temp: 0 ~ 250℃
Control Accuracy: Set temp ± 1℃
- Tem Unifomity: Set temp <± 5℃ / Soak <± 3℃
- Temp Read: Non-Contact Pyrometer 4Point
- Temp Control: Real Time 4 Point MIMO Control
- Power Control: H/W 7 Zone / S/W 4 Zone
- Cold Heater Body Cooling 1/4″ In, Out
- Wafer Lift: Non Contact With Susceptor
- Chamber & Body Material: Teflon, Quartz
- Chamber Dome (Option): Long Term Process

CORONA™ 1200MD System
Analysis - Heating Chamber
- Application: Metal Analysis Process 8″ / 12″ Long Term Anneal (3Hours)
- Process Temp: 0 ~ 250℃
Control Accuracy: Set temp ± 1℃
- Tem Unifomity: Set temp <± 5℃ / Soak <± 3℃
- Temp Read: Non-Contact Pyrometer 4Point
- Temp Control: Real Time 4 Point MIMO Control
- Power Control: H/W 7 Zone / S/W 4 Zone
- Cold Heater Body Cooling 1/4″ In, Out
- Wafer Lift: Non Contact With Susceptor
- Chamber & Body Material: Teflon, Quartz
- Chamber Dome (Option): Long Term Process

CORONA™ 1200V System
Analysis - Heating Chamber
- Dimension: (w)800mm x (d)1200mm x (h)1800mm
- Application: Vacuum Organic Analysis Process 8″ / 12″
- Process Temp: RT ~ 400℃
Control Accuracy: Set temp ± 2℃
- Control Unifomity: Set temp <± 5℃
- Temp Read: Non-Contact Pyrometer 4Point
- Temp Control: Real Time 4 Point MIMO Control
- Power Control: H/W 7 Zone / S/W 4 Zone
- Substrate: Quartz Susceptor
- Process Pressure: ATM / RP
- Leak Intergrity: < 10mTorr/min

CORONA™ Table Heater
Analysis - Table Heater
- Dimension: (w)320mm x (d)450mm x (h)430mm
- Application: Wafer Anneal
- Process Temp: RT ~ 250℃
Control Accuracy: Set temp ± 1℃
- Tem Unifomity: Set temp ± 10℃
- Temp Read: K-Type T/C
- Cooling: Air Cooling
- Bath Material: Quartz
- Wafer Heating Area: Quartz &Teflon Mat

CHEM™ Inine Heater
Analysis - Chemical Heater
- Dimension: (pai)80mm x (h)120mm
- Application: Chemical Analysis
- Process Temp: RT ~ 200℃
Control Accuracy: Set temp ± 1℃
- Tem Unifomity: Set temp ± 10℃
- Temp Read: K-Type T/C

Core™ Lamp Heater System
WET - Wet Etch Heating System
- Application: Wet Etch Single Process
- Process Temp: 0 ~ 230℃
Control Accuracy: Set temp ± 1℃
- Tem Unifomity: Set temp <± 5℃ / Soak <± 3℃
- Temp Read: Non-Contact Pyrometer / Chemical Temp On Silicon Surface
- Temp Control: Real Time 3Point MIMO Control / 3Pyrometer (Center, Middle, Edge)
- Power Control: H/W 7Zone, S/W 3Zone
- Heater Colling: Cold Heater Body Cooling